Sputtering cathode having a non-bonded semiconducting target
US8460521B2 · kind B2 · utility
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11References
17Claims
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Key dates
| Filing date | Sep 28, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.