Method of manufacturing quantum dot
US8460632B2 · kind B2 · utility
5Cited by
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17Claims
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Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Dec 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.