Method of manufacturing semiconductor for transistor and method of manufacturing the transistor
US8460985B2 · kind B2 · utility
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2References
13Claims
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Key dates
| Filing date | Jul 2, 2010 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jul 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.