Method for obtaining a layer of AlN having substantially vertical sides
US8460987B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least one edge of which is aligned with at least one edge or side of the growth layer, in a plane which is substantially perpendicular to a surface of the substrate or a surface of the growth layer, and the etching of the AlN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.