Patent · US Active

Method for making a thin-film structure and resulting thin-film structure

US8461031B2 · kind B2 · utility

0Cited by

5References

24Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Joel Eymery · Saint-Égrève, FR
Pascal Pochet · La Murette, FR

Key dates

Filing date	Oct 25, 2006
Grant date	Jun 11, 2013
Priority date	—
Expiry date	Feb 13, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making a thin-film structure includes a thin film stabilized on a substrate. The structure of the thin film is defined by a material which includes at least one first chemical species. The method includes a step of inputting particles of the first chemical species into the thin film so as to compensate for the flow of vacancies from the surface of the film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.