Masked ion implant with fast-slow scan
US8461553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2011 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Jan 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.