Semiconductor light emitting device

US8461615B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Shigeya Kimura · Yokohama, JP
• Taisuke Sato · Yokohama, JP
• Toshihide Ito · Tokyo, JP
• Toshiyuki Oka · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Sep 3, 2010
• Grant date: Jun 11, 2013
• Expiry date: May 12, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.