MOS transistor with laser-patterned metal gate, and method for making the same
US8461628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2005 |
| Grant date | Jun 11, 2013 |
| Priority date | — |
| Expiry date | Apr 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.