Patent · US Active

Power semiconductor device

US8461645B2 · kind B2 · utility

1Cited by

5References

23Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Ralf Otremba · Kaufbeuren, DE
Josef Hoeglauer · Munich, DE
Roveendra PAUL · Fremont, US

Key dates

Filing date	Mar 16, 2011
Grant date	Jun 11, 2013
Priority date	—
Expiry date	Jul 29, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a second side of the semiconductor layer opposite the first side along a first direction. A drift zone is within the semiconductor layer between the first terminal and the second terminal. The drift zone has, in a central part, a compressive stress of at least 100 MPa along a second direction perpendicular to the first direction. The central part extends from 40% to 60% of an overall extension of the drift zone along the first direction and into a depth of the semiconductor layer of at least 10 μm with respect to at least one of the first side and the second side of the semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.