Patent · US Active

State-monitoring memory element

US8462576B2 · kind B2 · utility

0Cited by

56References

17Claims

0Family size

Assignee

Cypress Semiconductor Corporation · US

Inventors

Michael Sheets · Poughkeepsie, US
Timothy Williams · Bellevue, US

Key dates

Filing date	Nov 22, 2011
Grant date	Jun 11, 2013
Priority date	—
Expiry date	Nov 22, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH03K19/17764
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Embodiments of the invention relate to a state-monitoring memory element. The state-monitoring memory element may be implemented by degrading an input voltage supply to the state-monitoring memory element across a diode and/or a transistor. One or more current sources may be used to stress the state-monitoring memory element. A logic analyzer may be used to analyze the integrity of the state-monitoring memory element and trigger appropriate actions in the IC, e.g., reset, halt, remove power, interrupt, responsive to detecting a failure in the state-monitoring memory element. Multiple state-monitoring memory elements may be disturbed in different locations on the IC for better coverage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.