Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors
US8465589B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2010 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Feb 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6776
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.