Composition for wet etching of silicon dioxide
US8465662B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K13/08
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.