Hybrid lithographic method for fabricating complex multidimensional structures
US8465910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70375
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.