Semiconductor light-receiving element, optical communication device, optical interconnect module, and photoelectric conversion method
US8466528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2009 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Dec 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/407
Abstract
Provided is a high-speed and highly efficient semiconductor light-receiving element with small dependence on an incident light polarization direction. A semiconductor light-receiving element according to one aspect of the present invention includes a semiconductor layer including a light-absorbing layer 4, an MSM electrode 1 that is provided over the semiconductor layer, forms a Schottky junction with the semiconductor layer, and includes a slit-like opening, an anti-reflective film 2 formed over the semiconductor layer and the MSM electrode 1, and a Bragg reflection multilayer film 6 provided to a lower part of the semiconductor layer. The MSM electrode 1 includes a period capable of exciting surface plasmon to incident light of TM polarization, and obtains sufficient transmittance to the incident light of TE polarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.