Integrated-circuit amplifier with low temperature rise
US8466747B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Jul 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/18
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit comprises a GaAs substrate thermally and mechanically mounted on a SiC substrate. The GaAs substrate is doped to define first and second transistors. Circuit conductors are defined on the GaAs substrate, which conductors interconnect the source of the first transistor to neutral and the drain to the source of the second transistor. Conductors connect the gate of the second transistor to neutral, to define a cascode amplifier. The SiC substrate supports first and second matching circuits, one of which is connected to the gate of the first transistor, and the other of which is connected to the drain of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.