Semiconductor device and driving method thereof
US8467231B2 · kind B2 · utility
14Cited by
36References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Dec 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.