Magnetic random access memory devices configured for self-referenced read operation
US8467234B2 · kind B2 · utility
2Cited by
25References
20Claims
0Family size
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Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Jul 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory cell includes a sense layer, a storage layer, and a spacer layer disposed between the sense layer and the storage layer. During a write operation, the storage layer has a magnetization direction that is switchable between m directions to store data corresponding to one of m logic states, with m>2. During a read operation, the sense layer has a magnetization direction that is varied, relative to the magnetization direction of the storage layer, to determine the data stored by the storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.