Patent · US Active

Vertical cavity surface emitting laser device with monolithically integrated photodiode

US8467428B2 · kind B2 · utility

9Cited by

4References

12Claims

0Family size

Assignee

KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

Philipp Henning Gerlach · Ulm, DE
Roger King · Eindhoven, NL
Marcel F. Schemmann · Maria Hoop, NL

Key dates

Filing date	May 4, 2009
Grant date	Jun 18, 2013
Priority date	—
Expiry date	Jan 12, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/14
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The present invention relates to a vertical cavity surface emitting laser device comprising a VCSEL with a monolithically integrated photodiode. The photodiode (2) is formed of a layer sequence of a first n-doped region (6), a p-doped region (7), an intrinsic region (8) and a second n-doped region (9) of a semiconductor material. The photodiode (2) and the laser share a common electrode, which is realized as an Ohmic n-contact (10) at said first n-doped region (6). The proposed device allows less complex manufacturing, resulting in lower manufacturing costs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.