Waveguide path coupling-type photodiode
US8467637B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Jun 18, 2013 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/4214
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.