Dielectric device and method of manufacturing the same
US8468693B2 · kind B2 · utility
0Cited by
16References
5Claims
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Key dates
| Filing date | Aug 25, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 12, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49213
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dielectric device has a first conductor and a dielectric disposed thereon. An intermediate region is formed between the first conductor and dielectric. In the intermediate region, an additive different from the first conductor and dielectric and the dielectric are mixed with each other. The additive contains at least one element of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Cr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.