Hydrogen sensor and method of manufacturing the same
US8468872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A novel method of manufacturing a hydrogen sensor is disclosed. The method includes the steps of forming a thin film made of a transition metal or an alloy thereof on a surface of an elastic substrate, and forming a plurality of nanogaps in the thin film formed on the surface of the elastic substrate by applying a tensile force to the elastic substrate. The nanogaps are formed as the thin film is stretched in a direction in which the tensile force acts while being contracted in a direction perpendicular to the direction in which the tensile force acts when the tensile force is applied, and is contracted again in the direction in which the tensile force is released while being stretched again in the direction perpendicular to the direction in which the tensile force is released when the tensile force is released.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.