Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element
US8470189B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a mask pattern, a photoresist pattern having an opening is formed on a substrate, then, an inorganic film is formed so as to cover the upper surface of the photoresist pattern and the inside of the opening, then the inorganic film on the upper surface of the photoresist pattern is removed by a dry etching process. Subsequently, an inorganic mask pattern is formed by removing the photoresist pattern. The inorganic mask pattern thus formed hardly produces an issue of deformation such as physical displacement even when it is heated in the dry etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.