Method for processing portions of walls of an opening formed in a silicon substrate
US8470190B2 · kind B2 · utility
5Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing at least one wall of an opening formed in a silicon substrate, successively including the steps of implanting fluorine atoms into an upper portion of the wall of the opening, performing an oxidization step, and applying a specific processing to at least a portion of the non-implanted portion of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.