Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8471170B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/0894
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.