Elimination of short circuits between conductors by laser ablation
US8471172B2 · kind B2 · utility
0Cited by
6References
16Claims
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Key dates
| Filing date | Dec 6, 2007 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Apr 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively eliminating electrical shorts and other electrical defects from specific layers of a multilayer electronic device without damaging underlying layers. The method is based on a combination of an automated detection of the defects and selective laser ablation patterning (SLAP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.