Photoelectric conversion device and imaging device
US8471246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2009 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Aug 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Δ1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.