Method, apparatus, and system for micromechanical gas chemical sensing capacitor
US8471304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.