Solid-state imaging device and camera
US8471312B2 · kind B2 · utility
7Cited by
1References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Nov 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.