Semiconductor device and method of manufacturing the same
US8471363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Nov 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.