Hall effect ion ejection device
US8471453B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 4, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Oct 25, 2029 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF03H1/0075
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a Hall-effect ion ejection device that comprises a longitudinal axis substantially parallel to the ion ejection direction, and comprises at least: a main ionization and acceleration annular channel, the annular channel being open at its end; an anode extending inside the channel; a cathode extending outside the channel at the outlet thereof; a magnetic circuit for generating a magnetic field in a portion of the annular channel, said circuit including at least an annular inner wall, an annular outer wall and a bottom connecting the inner and outer annular walls and defining the downstream portion of the magnetic circuit; characterized in that the magnetic circuit is arranged so as to create at the outlet of the annular channel a magnetic field independent from the azimuth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.