Image sensor having multiple sensing layers
US8471939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2008 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Aug 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.