Non-volatile semiconductor memory device
US8472259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2011 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Jan 2, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device according to an embodiment includes a data write portion, the data write portion includes, in a write loop, a first operation mode of sequentially performing a program operation and a first verify operation, and a second operation mode of sequentially performing the program operation, the first verify operation, and a second verify operation, and the data write portion includes, in the first verify operation, precharging a bit-line connected to the first memory cell and a bit-line connected to a second memory cell adjacent to the first memory cell and verifying data of the first memory cell, then in the second verify operation, when the write to the second memory cell is completed, without precharging the bit-line connected to the second memory cell, precharging the bit-line connected to the first memory cell and verifying data of the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.