Integrated semiconductor optical device
US8472760B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 18, 2010 |
| Grant date | Jun 25, 2013 |
| Priority date | — |
| Expiry date | Mar 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.