Optoelectronic device and the manufacturing method thereof
US8474233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.