Method of fabricating patterned CZT and CdTe devices
US8476101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.