Organic thin film transistors and methods of making them
US8476121B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Sep 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/115
Abstract
The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.