Fabrication technique for high frequency, high power group III nitride electronic devices
US8476125B2 · kind B2 · utility
32Cited by
13References
16Claims
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Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jan 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.