Semiconductor device and manufacturing method therefor
US8476163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Nov 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes providing a substrate having a first surface and a second surface, the second surface is on the opposite side of the substrate facing away from the first surface. The method further includes forming a first portion of an opening by etching a portion of the substrate from the first surface, forming a buffer layer on an inner surface of the first portion, etching a bottom of the buffer layer to expose an area of the underlying substrate, and etching the exposed area of the substrate to form a second portion of the opening. The method also includes performing an isotropic etching on the second portion of the opening to obtain a flask-shaped opening and filling the opening with a filling material. The method also includes partially removing a portion of the second surface and the filling material from the second portion of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.