Nanostructure optoelectronic device having sidewall electrical contact
US8476637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.