Semiconductor devices and methods of manufacturing the same
US8476692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Sep 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.