Patent · US Active

Distributed feedback laser having enhanced etch stop features

US8477817B1 · kind B1 · utility

0Cited by

2References

5Claims

0Family size

Assignee

FINISAR CORPORATION · US

Inventors

Ashish Verma · New Delhi, IN
Tsurugi Sudo · Pasadena, US
Sumesh Mani K. Thiyagarajan · Fremont, US
David Bruce Young · Taipei, TW

Key dates

Filing date	Oct 11, 2010
Grant date	Jul 2, 2013
Priority date	—
Expiry date	Oct 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34306
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.