Method for reading a nonvolatile memory by means of metadata and of a look-up table
US8478723B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Jul 2, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7211
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An example method for writing and reading data in electrically erasable and programmable nonvolatile memory (EEPROM) cells may include writing, in erased blocks of a first memory zone, data each having a logical address defined in relation to a virtual memory; writing, in a second memory zone, metadata structures associated with the data present in the first memory zone, configuring, in a volatile memory zone, for each logical address of a data stored in the first memory zone, addresses of metadata structures comprising the logical address, reading the look-up table and then reading metadata structures that the look-up table designates, to find, from the logical address of a data, an address in the first memory zone of a block containing a valid data having the logical address.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.