Plasma treatment system
US8480850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Feb 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32422
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma treatment system for treating a workpiece with a downstream-type plasma. The processing chamber of the plasma treatment system includes a chamber lid having a plasma cavity disposed generally between a powered electrode and a grounded plate, a processing space separated from the plasma cavity by the grounded plate, and a substrate support in the processing space for holding the workpiece. A direct plasma is generated in the plasma cavity. The grounded plate is adapted with openings that remove electrons and ions from the plasma admitted from the plasma cavity into the processing space to provide a downstream-type plasma of free radicals. The openings may also eliminate line-of-sight paths for light between the plasma cavity and processing space. In another aspect, the volume of the processing chamber may be adjusted by removing or inserting at least one removable sidewall section from the chamber lid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.