High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
US8481106B2 · kind B2 · utility
4Cited by
1References
12Claims
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Key dates
| Filing date | Mar 6, 2008 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Jun 2, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.