Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
US8481378B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 24, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake at a temperature lower or equal to 800° C., a subsequent deposition step will prevent deposition in the first surface region. This allows selective deposition in the second surface region, which is not doped with the Boron (or doped with another dopant or not doped). Several devices are, thus, provided. The method saves a usual photolithography sequence, which according to prior art is required for selective deposition of Si or SiGe in the second surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.