Memory cell that includes a carbon-based memory element and methods of forming the same
US8481394B2 · kind B2 · utility
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6References
15Claims
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Key dates
| Filing date | Mar 4, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Oct 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
In a first aspect, a method of forming a memory cell is provided that includes: (a) forming a layer of dielectric material above a substrate; (b) forming an opening in the dielectric layer; (c) depositing a solution that includes a carbon-based switching material on the substrate; (d) rotating the substrate to cause the solution to flow into the opening and to form a carbon-based switching material layer within the opening; and (e) forming a memory element using the carbon-based switching material layer. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.