Method for producing a metal contact on a coated semiconductor substrate

US8481419B2 · kind B2 · utility

Assignee

• SHOTT Solar AG · DE

Inventors

• Jorg Horzel · Leuven, BE
• Gunnar Schubert · Berlin, DE
• Stefan Dauwe · Blankenbach, DE
• Peter Roth · Austin, US
• Tobias Droste · Heilbad Heiligenstadt, DE
• Wilfried Schmidt · Mössingen, DE
• Ingrid Ernst · Alzenau, DE

Key dates

• Filing date: Nov 26, 2009
• Grant date: Jul 9, 2013
• Expiry date: Sep 4, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A method for producing an electrically conducting metal contact on a semiconductor component having a coating on the surface of a semiconductor substrate. In order to keep transfer resistances low while maintaining good mechanical strength, the invention proposes applying a particle-containing fluid onto the coating, where the particles contain at least metal particles and glass frits, curing the fluid while simultaneously forming metal areas in the substrate through heat treatment, removing the cured fluid and the areas of the coating covered by the fluid, and depositing, for the purposes of forming the contact without using intermediate layers, electrically conducting material from a solution onto areas of the semiconductor component in which the coating is removed while at the same time conductively connecting the metal areas present in said areas on the substrate.