Organic thin film transistors and methods of making the same

US8481994B2 · kind B2 · utility

Assignee

• Cambridge Display Technology Limited · GB

Inventors

• Jeremy Burroughes · Cambridge, GB
• Craig Murphy · Kirkland, US
• Gregory Whiting · Menlo Park, US
• Jonathan Halls · Cambridge, GB

Key dates

• Filing date: Nov 27, 2008
• Grant date: Jul 9, 2013
• Expiry date: Jan 4, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/115

Abstract

An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.