Light emitting device and method for fabricating the same
US8482018B2 · kind B2 · utility
1Cited by
5References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 2, 2008 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
Abstract
Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.