Semiconductor photodetector and manufacturing method therefor
US8482096B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Feb 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/331
Abstract
A method for manufacturing a semiconductor photodetector includes: forming an insulating film on a semiconductor substrate; forming an electrode on and in contact with a predetermined area of a surface of the semiconductor substrate; forming a resist on the insulating film after forming the electrode; forming a power supply layer of a metal on the resist and the electrode; plating a surface of a portion of the power supply layer with a metal coating, after forming the power supply layer, the portion overlying and being in contact with the electrode; after the plating, etching and removing a part of the power supply layer leaving a portion that is covered with the metal coating and is an extension of the electrode; and removing the resist after etching the power supply layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.